SiO2/Si etching in atmospheric pressure hydrogen DBD plasma

Investor logo

Warning

This publication doesn't include Faculty of Economics and Administration. It includes Faculty of Science. Official publication website can be found on muni.cz.
Authors

KRUMPOLEC Richard ČECH Jan ČERNÁK Mirko

Year of publication 2015
Type Conference abstract
MU Faculty or unit

Faculty of Science

Citation
Description The SiO2/Si etching was studied in DCSBD discharge generated in pure hydrogen at atmospheric pressure and room temeperature conditions. The estimated etching rate of SiO2 was approx. 1 nm/min.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.